是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | ROHS COMPLIANT, H2PAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 75 V | 最大漏极电流 (Abs) (ID): | 160 A |
最大漏极电流 (ID): | 160 A | 最大漏源导通电阻: | 0.0052 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
最大脉冲漏极电流 (IDM): | 640 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH15N50 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-218 |
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STH15N50FI | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.3A I(D) | TO-218VAR |
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STH15NA50 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STH15NA50FI | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STH15NB50 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET |
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STH15NB50FI | STMICROELECTRONICS |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET |
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STH16002 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC |
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STH16002A | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | TO-218AC |
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STH16004 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC |
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STH16006 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 8A I(C) | TO-218AC |
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