STH18NB40

更新时间： 2024-09-12 21:53:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	144K
描述
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

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STH18NB40 数据手册

STW18NB40

STH18NB40FI

N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218

PowerMesh™ MOSFET

PRELIMINARY DATA

TYPE

DSS

DS(on)

STW18NB40

STH18NB40FI

400 V

< 0.26 Ω

18.4 A

12.4 A

■

TYPICAL R (on) = 0.19 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

ISOWATT218

TO-247

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

INTERNAL SCHEMATIC DIAGRAM

nation structure, gives the lowest R

per area,

DS(on)

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STW18NB40

STH18NB40FI

Drain-source Voltage (V = 0)

400

±30

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

18.4

11.6

73.6

190

1.52

4.5

12.4

7.8

Drain Current (continuos) at T = 100°C

( )

Drain Current (pulsed)

73.6

Total Dissipation at T = 25°C

TOT

Derating Factor

0.64

4.5

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

ISO

2000

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I <18.4A, di/dt<200A/µ, V <V

,TJ<T

(BR)DSS JMAX

June 2002

1/7

12 3 4 5 6 7

中文翻译

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