Datasheet > STH200N10WF7-2

STH200N10WF7-2

更新时间： 2024-11-20 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	372K
描述
N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package

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STH200N10WF7-2 数据手册

STH200N10WF7-2

Datasheet

N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET

in an H²PAK-2 package

Features

TAB

DS(on)

max.

TOT

Order code

STH200N10WF7-2

100 V

4.0 mΩ

180 A

340 W

•

Best-in-class SOA capability

High current surge capability

Extremely low on-resistance

H PAK-2

Applications

D(TAB)

•

Hot-swap

Electronic fuse

Load switch

In-rush current limiter

G(1)

Description

S(2, 3)

This N-channel Power MOSFET utilizes the STripFET F7 technology with an

enhanced trench gate structure boosting linear mode withstanding capability and

providing a wider SOA combined with a very low on-state resistance. The resulting

MOSFET ensures the best trade-off between linear mode and switching operations.

DTG1S23NZ

Product status link

STH200N10WF7-2

Product summary

Order code

Marking

STH200N10WF7-2

200N10WF7

H²PAK-2

Package

Packing

Tape and reel

DS11828 - Rev 4 - July 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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