Datasheet > STH170N8F7-2

STH170N8F7-2

更新时间： 2024-11-20 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	817K
描述
N沟道80 V、0.0028 Ohm典型值、120 A STripFET F7功率MOSFET，H2PAK-2封装

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STH170N8F7-2 数据手册

STH170N8F7-2

N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7

Power MOSFET in a H²PAK-2 package

Datasheet — production data

Features

Order code

V_DSR_DS(on)max.

0.0037 Ω

I_D

P_TOT

STH170N8F7-2 80 V

120 A 250 W

TAB

•

Among the lowest R_DS(on)on the market

Excellent figure of merit (FoM)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

H²PAK-2

Applications

•

Switching applications

Figure 1. Internal schematic diagram

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

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Table 1. Device summary

Order code

Marking

170N8F7

Package

Packaging

STH170N8F7-2

H²PAK-2

Tape and reel

February 2015

DocID026382 Rev 2

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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