STH180N10F3-2

更新时间： 2024-11-19 12:29:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	957K
描述
N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET

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中文翻译

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数据手册
替代型号

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STH180N10F3-2 数据手册

STH180N10F3-2

N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2

STripFET™III Power MOSFET

Features

R_DS(on)

max.

TAB

Order codes

V_DSS

I_D

STH180N10F3-2

100 V

4.5 mΩ

180 A

■ Ultra low on-resistance

■ 100% avalanche tested

H²PAK-2

Applications

■ High current switching applications

Description

This device is an N-channel enhancement mode

Power MOSFETs produced using

Figure 1.

Internal schematic diagram

STMicroelectronics’ STripFET™ III technology,

which is specifically designed to minimize on-

resistance and gate charge to provide superior

switching performance.

D(TAB)

G(1)

S(2, 3)

SC06140_H2PAK-2

Table 1.

Device summary

Order codes

STH180N10F3-2

Marking

Package

H²PAK-2

Packaging

180N10F3

Tape and reel

July 2011

Doc ID 019060 Rev 1

1/15

www.st.com

12 3 4 5 6 7...15

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STH180N10F3-2 替代型号

型号	品牌	替代类型	描述	数据表
STU4N62K3	STMICROELECTRONICS	功能相似	N-channel 620 V, 1.7 Î© typ., 3.8 A SuperMESH
STF4N62K3	STMICROELECTRONICS	功能相似	N-channel 620 V, 1.7 Î© typ., 3.8 A SuperMESH

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