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STF4N62K3 PDF预览

STF4N62K3

更新时间: 2024-11-23 12:29:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 1061K
描述
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET

STF4N62K3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:2.26外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:620 V
最大漏极电流 (Abs) (ID):3.8 A最大漏极电流 (ID):3.8 A
最大漏源导通电阻:1.95 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):15.2 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF4N62K3 数据手册

 浏览型号STF4N62K3的Datasheet PDF文件第2页浏览型号STF4N62K3的Datasheet PDF文件第3页浏览型号STF4N62K3的Datasheet PDF文件第4页浏览型号STF4N62K3的Datasheet PDF文件第5页浏览型号STF4N62K3的Datasheet PDF文件第6页浏览型号STF4N62K3的Datasheet PDF文件第7页 
STF4N62K3, STFI4N62K3, STI4N62K3,  
STP4N62K3, STU4N62K3  
N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3™ Power MOSFET  
in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages  
Datasheet — production data  
Features  
TAB  
Order codes VDSS RDS(on) max  
ID  
PTOT  
3
STF4N62K3  
STFI4N62K3  
25 W  
25 W  
3
2
2
1
1
TO-220FP  
PAK  
STI4N62K3  
STP4N62K3  
STU4N62K3  
620 V  
< 2 Ω  
3.8 A 70 W  
70 W  
TAB  
1
70 W  
2
3
TAB  
PAKFP  
100% avalanche tested  
3
3
2
Extremely high dv/dt capability  
Gate charge minimized  
2
1
1
TO-220  
IPAK  
Very low intrinsic capacitance  
Figure 1.  
Internal schematic diagram  
Improved diode reverse recovery  
characteristics  
D(2,TAB)  
Zener-protected  
Applications  
Switching applications  
G(1)  
Description  
These SuperMESH3™ Power MOSFETs are the  
result of improvements applied to  
STMicroelectronics’ SuperMESH™ technology,  
combined with a new optimized vertical structure.  
These devices boast an extremely low on-  
resistance, superior dynamic performance and  
high avalanche capability, rendering them suitable  
for the most demanding applications.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STF4N62K3  
STFI4N62K3  
STI4N62K3  
STP4N62K3  
STU4N62K3  
TO-220FP  
PAKFP  
PAK  
4N62K3  
Tube  
TO-220  
IPAK  
August 2012  
Doc ID 17548 Rev 4  
1/19  
This is information on a product in full production.  
www.st.com  
19  
 

STF4N62K3 替代型号

型号 品牌 替代类型 描述 数据表
STP4N62K3 STMICROELECTRONICS

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N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH
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STH180N10F3-2 STMICROELECTRONICS

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N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET

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