5秒后页面跳转
STF57N65M5 PDF预览

STF57N65M5

更新时间: 2024-01-19 01:57:54
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
22页 1364K
描述
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages

STF57N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:2.25Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:222100
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220FP_1
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
雪崩能效等级(Eas):960 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):42 A最大漏源导通电阻:0.063 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):168 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF57N65M5 数据手册

 浏览型号STF57N65M5的Datasheet PDF文件第2页浏览型号STF57N65M5的Datasheet PDF文件第3页浏览型号STF57N65M5的Datasheet PDF文件第4页浏览型号STF57N65M5的Datasheet PDF文件第5页浏览型号STF57N65M5的Datasheet PDF文件第6页浏览型号STF57N65M5的Datasheet PDF文件第7页 
STB57N65M5, STF57N65M5, STI57N65M5,  
STP57N65M5  
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET  
in I²PAK, TO-220, TO-220FP and D²PAK packages  
Datasheet — production data  
Features  
TAB  
VDSS  
TJmax  
@
RDS(on)  
max  
Order codes  
ID  
3
1
3
STB57N65M5  
STF57N65M5  
STI57N65M5  
STP57N65M5  
2
1
PAK  
TO-220FP  
710 V  
< 0.063 Ω  
42 A  
TAB  
TAB  
Worldwide best RDS(on)*area amongst the  
silicon based devices  
3
2
3
1
2
Higher VDSS rating, high dv/dt capability  
Excellent switching performance  
1
I²PAK  
TO-220  
Easy to drive, 100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Applications  
$ꢅꢆꢇ 4!"ꢈ  
Switching applications  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
Packaging  
STB57N65M5  
STF57N65M5  
STI57N65M5  
STP57N65M5  
PAK  
TO-220FP  
PAK  
Tape and reel  
Tube  
57N65M5  
Tube  
TO-220  
Tube  
December 2012  
Doc ID 022849 Rev 4  
1/22  
This is information on a product in full production.  
www.st.com  
22  

STF57N65M5 替代型号

型号 品牌 替代类型 描述 数据表
TK39A60W TOSHIBA

功能相似

Switching Voltage Regulators
APT40N60JCU2 MICROSEMI

功能相似

ISOTOP Boost chopper Super Junction MOSFET Power Module
IXKR40N60 IXYS

功能相似

CoolMOS Power MOSFET in ISOPLUS247 Package

与STF57N65M5相关器件

型号 品牌 获取价格 描述 数据表
STF5N105K5 STMICROELECTRONICS

获取价格

N沟道1050 V、2.9 Ohm典型值、3 A MDmesh K5功率MOSFET,TO
STF5N52K3 ETC

获取价格

N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™
STF5N52U STMICROELECTRONICS

获取价格

N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET
STF5N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、1.3 Ohm典型值、3.5 A MDmesh M2功率MOSFET,T
STF5N62K3 STMICROELECTRONICS

获取价格

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET
STF5N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET,TO
STF5N95K3 STMICROELECTRONICS

获取价格

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3
STF5N95K5 STMICROELECTRONICS

获取价格

N沟道950 V、2 Ohm典型值、3.5 A MDmesh K5功率MOSFET,TO-
STF5NK100Z STMICROELECTRONICS

获取价格

N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STF5NK52ZD STMICROELECTRONICS

获取价格

N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2P