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STF57N65M5 PDF预览

STF57N65M5

更新时间: 2024-11-18 12:26:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
22页 1364K
描述
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages

STF57N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:2.25Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:222100
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220FP_1
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
雪崩能效等级(Eas):960 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):42 A最大漏源导通电阻:0.063 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):168 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF57N65M5 数据手册

 浏览型号STF57N65M5的Datasheet PDF文件第2页浏览型号STF57N65M5的Datasheet PDF文件第3页浏览型号STF57N65M5的Datasheet PDF文件第4页浏览型号STF57N65M5的Datasheet PDF文件第5页浏览型号STF57N65M5的Datasheet PDF文件第6页浏览型号STF57N65M5的Datasheet PDF文件第7页 
STB57N65M5, STF57N65M5, STI57N65M5,  
STP57N65M5  
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET  
in I²PAK, TO-220, TO-220FP and D²PAK packages  
Datasheet — production data  
Features  
TAB  
VDSS  
TJmax  
@
RDS(on)  
max  
Order codes  
ID  
3
1
3
STB57N65M5  
STF57N65M5  
STI57N65M5  
STP57N65M5  
2
1
PAK  
TO-220FP  
710 V  
< 0.063 Ω  
42 A  
TAB  
TAB  
Worldwide best RDS(on)*area amongst the  
silicon based devices  
3
2
3
1
2
Higher VDSS rating, high dv/dt capability  
Excellent switching performance  
1
I²PAK  
TO-220  
Easy to drive, 100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Applications  
$ꢅꢆꢇ 4!"ꢈ  
Switching applications  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
Packaging  
STB57N65M5  
STF57N65M5  
STI57N65M5  
STP57N65M5  
PAK  
TO-220FP  
PAK  
Tape and reel  
Tube  
57N65M5  
Tube  
TO-220  
Tube  
December 2012  
Doc ID 022849 Rev 4  
1/22  
This is information on a product in full production.  
www.st.com  
22  

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