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STF6N62K3 PDF预览

STF6N62K3

更新时间: 2024-02-07 00:28:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
19页 1052K
描述
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages

STF6N62K3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:HALOGEN FREE AND ROHS COMPLIANT, TO-220FP, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.36
雪崩能效等级(Eas):140 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:620 V
最大漏极电流 (Abs) (ID):5.5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:1.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF6N62K3 数据手册

 浏览型号STF6N62K3的Datasheet PDF文件第2页浏览型号STF6N62K3的Datasheet PDF文件第3页浏览型号STF6N62K3的Datasheet PDF文件第4页浏览型号STF6N62K3的Datasheet PDF文件第5页浏览型号STF6N62K3的Datasheet PDF文件第6页浏览型号STF6N62K3的Datasheet PDF文件第7页 
STF6N62K3, STFI6N62K3, STI6N62K3,  
STP6N62K3, STU6N62K3  
N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3™ Power  
MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages  
Datasheet production data  
Features  
TAB  
Order codes VDSS RDS(on) max.  
ID  
PTOT  
3
3
STF6N62K3  
STFI6N62K3  
30 W  
30 W  
2
2
1
1
TO-220FP  
PAK  
STI6N62K3 620 V  
STP6N62K3  
< 1.2 Ω  
5.5 A 90 W  
90 W  
TAB  
1
2
3
STU6N62K3  
90 W  
TAB  
PAK FP  
100% avalanche tested  
3
3
2
2
Extremely high dv/dt capability  
Gate charge minimized  
1
1
IPAK  
TO-220  
Very low intrinsic capacitance  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Figure 1.  
Internal schematic diagram  
D(2,TAB)  
Applications  
Switching applications  
Description  
G(1)  
These SuperMESH3™ Power MOSFETs are the  
result of improvements applied to  
STMicroelectronics’ SuperMESH™ technology,  
combined with a new optimized vertical structure.  
These devices boast an extremely low on-  
resistance, superior dynamic performance and  
high avalanche capability, rendering them suitable  
for the most demanding applications.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STF6N62K3  
STFI6N62K3  
STI6N62K3  
STP6N62K3  
STU6N62K3  
TO-220FP  
PAKFP  
PAK  
6N62K3  
Tube  
TO-220  
IPAK  
August 2012  
Doc ID 14676 Rev 4  
1/19  
This is information on a product in full production.  
www.st.com  
19  
 

STF6N62K3 替代型号

型号 品牌 替代类型 描述 数据表
STP4NK60ZFP STMICROELECTRONICS

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N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D
STP10NK60ZFP STMICROELECTRONICS

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N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2

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