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APT40N60JCU2 PDF预览

APT40N60JCU2

更新时间: 2024-02-19 22:47:55
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
8页 490K
描述
ISOTOP Boost chopper Super Junction MOSFET Power Module

APT40N60JCU2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:ISOTOP
包装说明:FLANGE MOUNT, R-XUFM-X4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:2.2其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1800 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):40 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):290 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT40N60JCU2 数据手册

 浏览型号APT40N60JCU2的Datasheet PDF文件第2页浏览型号APT40N60JCU2的Datasheet PDF文件第3页浏览型号APT40N60JCU2的Datasheet PDF文件第4页浏览型号APT40N60JCU2的Datasheet PDF文件第5页浏览型号APT40N60JCU2的Datasheet PDF文件第6页浏览型号APT40N60JCU2的Datasheet PDF文件第7页 
APT40N60JCU2  
ISOTOP® Boost chopper  
Super Junction  
VDSS = 600V  
RDSon = 70mmax @ Tj = 25°C  
ID = 40A @ Tc = 25°C  
MOSFET Power Module  
K
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Brake switch  
D
Features  
G
-
Ultra low RDSon  
-
-
-
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
S
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
K
S
Benefits  
Outstanding performance at high frequency operation  
Stable temperature behavior  
Very rugged  
D
G
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
ISOTOP  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
600  
V
Tc = 25°C  
Tc = 80°C  
40  
30  
120  
±20  
70  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
m  
W
PD  
IAR  
EAR  
EAS  
IFAV  
IFRMS  
Maximum Power Dissipation  
Tc = 25°C  
Tc = 80°C  
290  
Avalanche current (repetitive and non repetitive)  
20  
1
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
1800  
30  
Maximum Average Forward Current  
Duty cycle=0.5  
A
RMS Forward Current (Square wave, 50% duty)  
39  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 8  
www.microsemi.com  

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