IXKR40N60

更新时间： 2024-11-17 22:07:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	49K
描述
CoolMOS Power MOSFET in ISOPLUS247 Package

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中文翻译

获取价格

数据手册
替代型号

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IXKR40N60 数据手册

Advanced Technical Information

V_DSS

I_D25

R_DS(on)

CoolMOS Power MOSFET

in ISOPLUS247^TMPackage

600 V 38 A 70 mΩ

IXKR 40N60C

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Package with Electrically Isolated Base

ISOPLUS 247^TM

E153432

MOSFET

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

600

±20

Isolated base*

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

G = Gate

D = Drain

S = Source

* Patent pending

dv/dt

V_DS< V_DSS; I_F≤ 50A; di_F/dt ≤ 200A/µs

V/ns

T_VJ= 150°C

Features

E_AS

E_AR

I_D= 10 A; L = 36 mH; T_C= 25°C

I_D= 20 A; L = 5 µH; T_C= 25°C

1.8

●

ISOPLUS247 package with DCB Base

- Electrical isolation towards the heatsink

- Lowcouplingcapacitancetotheheatsinkfor

reduced EMI

- High power dissipation

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

- High temperature cycling capability

of chip on DCB

- JEDEC TO247AD compatible

- Easy clip assembly

min.

typ. max.

70 mΩ

5.5 V

R_DSon

V_GSth

I_DSS

V_GS= 10 V; I_D= I_D90

^●fast CoolMOS power MOSFET - 2^ndgeneration

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

V_DS= 20 V;I_D= 3 mA;

3.5

V_DS= V_DSS;V_GS= 0 V; T_VJ= 25°C

T_VJ= 125°C

25 µA

µA

due to reduced chip thickness

I_GSS

V_GS= ±20 V; V_DS= 0 V

100 nA

●

Enhanced total power density

Q_g

Q_gs

Q_gd

220

125

V_GS= 10 V; V_DS= 350 V; I_D= 50 A

Applications

●

Switched mode power supplies (SMPS)

Uninterruptible power supplies (UPS)

Power factor correction (PFC)

Welding

t_d(on)

t_r

t_d(off)

t_f

100

●

V_GS= 10 V; V_DS= 380 V;

I_D= 25 A; R_G= 1.8 Ω

●

Inductive heating

V_F

(reverse conduction) I_F= 20 A; V_GS= 0 V

0.9

1.1

CoolMOS is a trademark of

Infineon Technologies AG.

R_thJC

0.45 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 2

中文翻译

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IXKR40N60 替代型号

型号	品牌	替代类型	描述	数据表
STF57N65M5	STMICROELECTRONICS	功能相似	N-channel 650 V, 0.056 Î© typ., 42 A MDmeshâ
APT40N60JCU2	MICROSEMI	功能相似	ISOTOP Boost chopper Super Junction MOSFET Power Module
FMD40-06KC	IXYS	功能相似	HiPerFET Power MOSFETs -Boost Chopper Topology in ISOPLUS i4-PAC

与IXKR40N60相关器件

型号	品牌	获取价格	描述	数据表
IXKR40N60C	IXYS	获取价格	CoolMOS Power MOSFET in ISOPLUS247 Package
IXKR40N60C	LITTELFUSE	获取价格	此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS
IXKR47N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXKR47N60C5	IXYS	获取价格	Power Field-Effect Transistor, 47A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IXKT70N60C5	IXYS	获取价格	Power Field-Effect Transistor
IXKT70N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXKX50N60BU1	IXYS	获取价格	IGBT with Diode
IXLD02SI	IXYS	获取价格	Differential 2A Ultra Fast Laser Diode Driver
IXLD1426COA	ETC	获取价格	Dual MOSFET Driver
IXLD1426CPA	LITTELFUSE	获取价格	MOSFET Driver, CMOS, PDIP8,

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