Datasheet > IXKT70N60C5

IXKT70N60C5

更新时间： 2024-11-18 21:18:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	148K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXKT70N60C5 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXKT70N60C5 数据手册

Advanced Technical Information

IXKT 70N60C5

CoolMOS™¹⁾Power MOSFET

I_D25

V_DSS

66A

= 600V

R_{DS(on) max}= 0.045Ω

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Ultra low gate charge

TO-268 AA

D(TAB)

Features

MOSFET

• fast CoolMOS™ ¹⁾power MOSFET

Symbol

V_DSS

Conditions

Maximum Ratings

4^thgeneration

T_VJ= 25°C

600

- High blocking capability

- Lowest resistance

V_GS

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

• Enhanced total power density

I_D25

I_D90

T_C= 25°C

T_C= 90°C

E_AS

E_AR

single pulse

repetitive

1950

I_D= 11 A; T_C= 25°C

dV/dt

MOSFET dV/dt ruggedness V_DS= 0...480 V

50 V/ns

Applications

• Switched mode power supplies

(SMPS)

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise speciﬁed)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

min. typ. max.

R_DSon

V_GS= 10 V; I_D= 44 A

mΩ

• Inductive heating

• PDP and LCD adapter

V_GS(th)

I_DSS

V_DS= V_GS; I_D= 3 mA

2.5

3.5

V_DS= 600 V; V_GS= 0 V

T_VJ= 25°C

T_VJ= 125°C

µA

¹⁾CoolMOS™ is a trademark of

Inﬁneon Technologies AG.

I_GSS

V_GS

20 V; V_DS= 0 V

100

190

C_iss

C_oss

V_GS= 0 V; V_DS= 100 V

f = 1 MHz

6800

320

Q_g

Q_gs

Q_gd

150

V_GS= 0 to 10 V; V_DS= 400 V; I_D= 44 A

t_d(on)

t_r

t_d(off)

t_f

100

V_GS= 10 V; V_DS= 400 V

I_D= 44 A; R_G= 3.3 Ω

R_thJC

0.23 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

20090209e

1 - 4

12 3 4 5

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