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IXKX50N60BU1 PDF预览

IXKX50N60BU1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
6页	146K
描述
IGBT with Diode

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IXKX50N60BU1 数据手册

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IGBT with Diode

IXSK 50N60BU1 V_CES

IXSX 50N60BU1 I_C25

= 600 V

= 75 A

V_CE(sat)= 2.5 V

Short Circuit SOA Capability

PLUS247

(IXSX)

Symbol

TestConditions

MaximumRatings

C (TAB)

G

V_CES

V_CGR

T_J= 25°C to 150°C

600

600

V

C

E

T_J= 25°C to 150°C; R_GE= 1 MW

V

TO-264 AA

(IXSK)

V_GES

V_GEM

Continuous

Transient

±20

±30

V

V

I_C25

I_C90

I_CM

T_C= 25°C, limited by leads

T_C= 90°C

75

50

A

A

A

G

C

E

T_C= 25°C, 1 ms

200

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 22 W

Clamped inductive load, L = 30 mH

I_CM= 100

@ 0.8 V_CES

A

ms

W

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

t_SC

(SCSOA)

V_GE= 15 V, V_CE= 360 V, T_J= 125°C

R_G= 22 W, non repetitive

10

Features

• Internationalstandardpackage

P_C

T_C= 25°C

300

JEDEC TO-264 AA, and hole-less

TO-247 package for clip mounting

• Guaranteed Short Circuit SOA

capability

• High frequency IGBT and anti-

parallel FRED in one package

• Latest generation HDMOS^TMprocess

• Low V_CE(sat)

T_J

-55 ... +150

150

°C

°C

°C

T_JM

T_stg

-55 ... +150

M_d

Mountingtorque

0.9/6 Nm/lb.in.

Weight

10

g

- forminimumon-stateconduction

losses

• MOS Gate turn-on

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- drive simplicity

• Fast RecoveryEpitaxial Diode (FRED)

- soft recovery with low I_RM

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

powersupplies

BV_CES

V_GE(th)

I_C= 3 mA, V_GE= 0 V

I_C= 4 mA, V_CE= V_GE

600

4

V

8

V

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

325

17 mA

mA

Advantages

• Space savings (two devices in one

package)

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

• Reduces assembly time and cost

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

2.5

nA

V

V_CE(sat)

I_C= I_C90; V_GE= 15 V,

2.2

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

97520A(12/98)

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