Datasheet > IXKR40N60C

IXKR40N60C

更新时间： 2023-12-06 20:13:04

品牌	Logo	应用领域
力特 - LITTELFUSE		散热片
页数	文件大小	规格书
3页	170K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。这些器件经过了雪崩评级，因此可确保稳定可靠的运行。功能与特色: 应用: 优点:

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数据手册

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IXKR40N60C 数据手册

IXKR 40N60C

CoolMOS^{™ 1)}Power MOSFET

V_DSS

I_D25

R_DS(on)

in ISOPLUS247^TMPackage

600 V 38 A 70 mΩ

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Package with Electrically Isolated Base

ISOPLUS 247^TM

E153432

Preliminary data

Isolated base

G = Gate

D = Drain

S = Source

Features

MOSFET

• ISOPLUS247™ package with DCB Base

- Electrical isolation towards the heatsink

- Low coupling capacitance to the heatsink for

reduced EMI

- High power dissipation

- High temperature cycling capability

of chip on DCB

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

600

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

- JEDEC TO-247AD compatible

- Easy clip assembly

• fast CoolMOS^{™ 1)}power MOSFET 3^rd

generation

dv/dt

V_DS< V_DSS; I_F≤ 50A;⎮di_F/dt⎮≤ 100A/µs

T_VJ= 150°C

V/ns

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped

inductive switching (UIS)

E_AS

E_AR

I_D= 10 A; L = 36 mH; T_C= 25°C

I_D= 20 A; L = 5 µH; T_C= 25°C

1.8

- Low thermal resistance

due to reduced chip thickness

• Enhanced total power density

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

Applications

min.

typ. max.

70 mΩ

3.9 V

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

R_DSon

V_GSth

I_DSS

V_GS= 10 V; I_D= I_D90

V_DS= 20 V;I_D= 3 mA;

2.1

• Inductive heating

V_DS= V_DSS;V_GS= 0 V; T_VJ= 25°C

T_VJ= 125°C

25 µA

µA

¹⁾CoolMOS^™is a trademark of

Infineon Technologies AG.

I_GSS

V_GS= 20 V; V_DS= 0 V

100 nA

Q_g

Q_gs

Q_gd

250

120

V_GS= 10 V; V_DS= 350 V; I_D= 50 A

t_d(on)

t_r

t_d(off)

t_f

110

V_GS= 10 V; V_DS= 380 V;

I_D= 50 A; R_G= 1.8 Ω

V_F

(reverse conduction) I_F= 20 A; V_GS= 0 V

0.9

1.1

R_thJC

0.45 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

20080523a

1 - 2

12 3

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