Datasheet > IXKR47N60C5

IXKR47N60C5

更新时间： 2024-11-18 19:57:55

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	171K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXKR47N60C5 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

IXKR47N60C5 数据手册

Advanced Technical Information

IXKR 47N60C5

CoolMOS^{™ 1)}Power MOSFET

V_DSS

I_D25

= 600V

= 47A

R_{DS(on) max}= 45mΩ

Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode

Low R_DSon, high V_DSSMOSFET

Ultra low gate charge

ISOPLUS247^TM

isolated back

surface

E72873

Features

MOSFET

• Silicon chip on Direct-Copper-Bond

substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

- low drain to tab capacitance (< 30 pF)

• Fast CoolMOS^{™ 1)}power MOSFET 4^th

generation

- high blocking capability

- lowest resistance

- avalanche rated for unclamped

inductive switching (UIS)

- low thermal resistance

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C

600

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

E_AS

E_AR

single pulse

repetitive

1950

I_D= 11 A; T_C= 25°C

dV/dt

MOSFET dV/dt ruggedness V_DS= 0...480 V

50 V/ns

Symbol

wiConditions

Characteristic Values

due to reduced chip thickness

• Enhanced total power density

(T_VJ= 25°C, unless otherwise speciﬁed)

min. typ. max.

Applications

R_DSon

V_GS= 10 V; I_D= 44 A

mΩ

• Switched mode power supplies

(SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

V_GS(th)

I_DSS

V_DS= V_GS; I_D= 3 mA

V_DS= V_DSS; V_GS= 0 V

2.5

3.5

T_VJ= 25°C

T_VJ= 150°C

µA

• Inductive heating

• PDP and LCD adapter

I_GSS

V_GS

20 V; V_DS= 0 V

100

C_iss

C_oss

V_GS= 0 V; V_DS= 100 V

f = 1 MHz

6800

320

Advantages

Q_g

Q_gs

Q_gd

150

190

• Easy assembly:

no screws or isolation foils required

• Space savings

V_GS= 0 to 10 V; V_DS= 400 V; I_D= 44 A

• High power density

• High reliability

t_d(on)

t_r

t_d(off)

t_f

100

V_GS= 10 V; V_DS= 400 V

I_D= 44 A; R_G= 3.3 Ω

¹⁾CoolMOS^™is a trademark of

Inﬁneon Technologies AG.

R_thJC

R_thCH

0.45 K/W

K/W

with heatsink compound

0.25

IXYS reserves the right to change limits, test conditions and dimensions.

20080523b

1 - 4

12 3 4 5

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