IXKR40N60C

更新时间： 2024-11-17 22:11:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	49K
描述
CoolMOS Power MOSFET in ISOPLUS247 Package

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中文翻译

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数据手册

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IXKR40N60C 数据手册

Advanced Technical Information

V_DSS

I_D25

R_DS(on)

CoolMOS Power MOSFET

in ISOPLUS247^TMPackage

600 V 38 A 70 mΩ

IXKR 40N60C

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Package with Electrically Isolated Base

ISOPLUS 247^TM

E153432

MOSFET

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

600

±20

Isolated base*

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

G = Gate

D = Drain

S = Source

* Patent pending

dv/dt

V_DS< V_DSS; I_F≤ 50A; di_F/dt ≤ 200A/µs

V/ns

T_VJ= 150°C

Features

E_AS

E_AR

I_D= 10 A; L = 36 mH; T_C= 25°C

I_D= 20 A; L = 5 µH; T_C= 25°C

1.8

●

ISOPLUS247 package with DCB Base

- Electrical isolation towards the heatsink

- Lowcouplingcapacitancetotheheatsinkfor

reduced EMI

- High power dissipation

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

- High temperature cycling capability

of chip on DCB

- JEDEC TO247AD compatible

- Easy clip assembly

min.

typ. max.

70 mΩ

5.5 V

R_DSon

V_GSth

I_DSS

V_GS= 10 V; I_D= I_D90

^●fast CoolMOS power MOSFET - 2^ndgeneration

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

V_DS= 20 V;I_D= 3 mA;

3.5

V_DS= V_DSS;V_GS= 0 V; T_VJ= 25°C

T_VJ= 125°C

25 µA

µA

due to reduced chip thickness

I_GSS

V_GS= ±20 V; V_DS= 0 V

100 nA

●

Enhanced total power density

Q_g

Q_gs

Q_gd

220

125

V_GS= 10 V; V_DS= 350 V; I_D= 50 A

Applications

●

Switched mode power supplies (SMPS)

Uninterruptible power supplies (UPS)

Power factor correction (PFC)

Welding

t_d(on)

t_r

t_d(off)

t_f

100

●

V_GS= 10 V; V_DS= 380 V;

I_D= 25 A; R_G= 1.8 Ω

●

Inductive heating

V_F

(reverse conduction) I_F= 20 A; V_GS= 0 V

0.9

1.1

CoolMOS is a trademark of

Infineon Technologies AG.

R_thJC

0.45 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 2

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