Datasheet > STH175N4F6-2AG

STH175N4F6-2AG

更新时间： 2024-11-20 01:21:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	594K
描述
Very low on-resistance

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STH175N4F6-2AG 数据手册

STH175N4F6-2AG,

STH175N4F6-6AG

Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™

F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages

Datasheet production data

Features

Order codes

V_DS

R_DS(on)max

I_D

TAB

STH175N4F6-2AG

STH175N4F6-6AG

40 V

2.4 mΩ

120 A

• Designed for automotive applications and

AEC-Q101 qualified

H²PAK-2

• Very low on-resistance

• Very low gate charge

H²PAK-6

• High avalanche ruggedness

• Low gate drive power loss

Figure 1. Internal schematic diagram

Applications

D(TAB)

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFETs exhibit very low R_DS(on)in all

packages.

G(1)

S(2, 3)

S(2, 3, 4, 5, 6, 7)

H PAK-6

H PAK-2

AM14551V1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STH175N4F6-2AG

STH175N4F6-6AG

H²PAK-2

H²PAK-6

175N4F6

Tape and reel

February 2015

DocID027534 Rev 1

1/18

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...18

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