Datasheet > STH140N6F7-6

STH140N6F7-6

更新时间： 2024-01-08 22:55:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	857K
描述
High avalanche ruggedness

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中文翻译

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技术参数
数据手册

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STH140N6F7-6 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	2.12
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STH140N6F7-6 数据手册

STH140N6F7-2, STH140N6F7-6

N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7

Power MOSFETs in H²PAK-2 and H²PAK-6 packages

Datasheet - production data

Features

Order code

STH140N6F7-2

STH140N6F7-6

V_DSR_DS(on)max.

60 V 0.0032 Ω

I_D

P_TOT

80 A 158 W



Among the lowest R_DS(on)on the market

Excellent figure of merit (FoM)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

STH140N6F7-2

STH140N6F7-6

Marking

140N6F7

Package

H²PAK-2

H²PAK-6

Packing

Tape and Reel

July 2015

DocID025089 Rev 3

1/19

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...19

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