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STH140N8F7-2 PDF预览

STH140N8F7-2

更新时间: 2023-12-20 18:44:50
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 766K
描述
N沟道80 V、3.3 mOhm典型值、90 A STripFET F7功率MOSFET,H2PAK-2封装

STH140N8F7-2 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.53
配置:Single最大漏极电流 (Abs) (ID):90 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高工作温度:175 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W子类别:FET General Purpose Power
表面贴装:YES处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STH140N8F7-2 数据手册

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STH140N8F7-2  
N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power  
MOSFET in a H2PAK-2 package  
Datasheet - production data  
Features  
Order code  
VDS RDS(on) max.  
4 mΩ  
ID  
PTOT  
STH140N8F7-2 80 V  
90 A 200 W  
Among the lowest RDS(on) on the market  
Excellent figure of merit (FoM)  
Low Crss/Ciss ratio for EMI immunity  
High avalanche ruggedness  
Applications  
Switching applications  
Figure 1: Internal schematic diagram  
Description  
This N-channel Power MOSFET utilizes  
STripFET™ F7 technology with an enhanced  
trench gate structure that results in very low on-  
state resistance, while also reducing internal  
capacitance and gate charge for faster and more  
efficient switching.  
Table 1: Device summary  
Order code  
Marking  
Package Packaging  
Tape and  
STH140N8F7-2 140N8F7 H2PAK-2  
reel  
October 2014  
DocID026821 Rev 2  
1/15  
www.st.com  
This is information on a product in full production.  

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