Datasheet > STH150N10F7-2

STH150N10F7-2

更新时间： 2024-11-20 14:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	952K
描述
N沟道100 V、0.0038 Ohm典型值、90 A STripFET F7功率MOSFET，H2PAK-2封装

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技术参数
数据手册

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STH150N10F7-2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	37 weeks
风险等级：	2.09	Samacsys Description：	N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STMicroelectronics STH150N10F7-2
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STH150N10F7-2 数据手册

STH150N10F7-2

N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7

Power MOSFET in a H PAK-2 package

Datasheet

−

production data

Features

Order code

V_DSR_DS(on)max

I_D

P_TOT

STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W

TAB

• Among the lowest R_DS(on)on the market

• Excellent figure of merit (FoM)

• Low C_rss/C_issratio for EMI immunity

• High avalanche ruggedness

H²PAK-2

Applications

• Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Figure 1. Internal schematic diagram

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Table 1. Device summary

Order code

Marking

150N10F7

Package

Packaging

H²PAK-2

STH150N10F7-2

Tape and reel

September 2016

DocID025859 Rev 3

1/16

www.st.com

12 3 4 5 6 7...16

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