Datasheet > STH110N10F7-2

STH110N10F7-2

更新时间： 2024-02-10 04:07:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	863K
描述
High avalanche ruggedness

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数据手册

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STH110N10F7-2 数据手册

STH110N10F7-2,

STH110N10F7-6

N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7

Power MOSFETs in H²PAK-2 and H²PAK-6 packages

Datasheet - production data

Features

TAB

R_DS(on)

Order code

V_DS

I_D

P_TOT

max.

STH110N10F7-2

STH110N10F7-6

100 V

6.5 mΩ

110 A

150 W

H PAK-6

H PAK-2



Among the lowest R_DS(on)on the market

Excellent figure of merit (FoM)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

These N-channel Power MOSFETs utilize

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

S(2,3,4,5,6,7)

Table 1: Device summary

Order code

Marking

Package

H²PAK-2

H²PAK-6

Packing

STH110N10F7-2

STH110N10F7-6

Tape

and reel

110N10F7

November 2014

DocID024027 Rev 4

1/19

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...19

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