Datasheet > STH13N120K5-2AG

STH13N120K5-2AG

更新时间： 2024-11-20 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	580K
描述
汽车级N沟道1200 V、630 mOhm典型值、12 A MDmesh K5功率MOSFET，H2PAK-2封装

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技术参数
数据手册

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STH13N120K5-2AG 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	17 weeks	风险等级：	2.14
Base Number Matches：	1

STH13N120K5-2AG 数据手册

STH13N120K5-2AG

Datasheet

Automotive-grade N-channel 1200 V, 0.62 Ω typ., 12 A, MDmesh K5

Power MOSFET in an H²PAK‑2 package

Features

TAB

DS(on)

max.

TOT

Order code

STH13N120K5-2AG

1200 V

0.69 Ω

12 A

250 W

•

AEC-Q101 qualified

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

H PAK-2

D(TAB)

100% avalanche tested

Zener-protected

G(1)

Applications

•

Switching applications

S(2,3)

NCHG1DTABS23TZ

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STH13N120K5-2AG

Product summary⁽¹⁾

Order code

Marking

STH13N120K5-2AG

13N120K5

Package

Packing

H²PAK-2

Tape and reel

1. HTRB test was performed at 80% of

according to AEC-Q101 rev.

(BR)DSS

C. All other tests were performed

according to AEC-Q101 rev. D.

DS12917 - Rev 5 - June 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...15

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