Datasheet > STH13NB60

STH13NB60

更新时间： 2024-11-18 22:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	113K
描述
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

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STH13NB60 数据手册

STW13NB60

STH13NB60FI

N - CHANNEL 600V - 0.48

Ω

- 13A - TO-247/ISOWATT218

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STW13NB60

STH13NB60FI

600 V

<0.54 Ω

13 A

8.6 A

<0.54

Ω

■

TYPICAL R_DS(on)= 0.48

Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

TO-247

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES(SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STW13NB60 STH13NB60FP

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

600

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

± 30

8.2

8.6

5.4

I_D

Drain Current (continuous) at T_c= 100 C

I_DM(• )

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

190

1.52

Derating Factor

0.64

W/^oC

V/ns

dv/dt(1) Peak Diode Recovery voltage slope

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

2000

-65 to 150

150

^oC

Max. Operating Junction Temperature

•)

(

≤ , ≤ Α/µ

≤

Pulse width limited by safe operating area

( 1) I_SD13 A di/dt 200 s, V_DDV_(BR)DSS, Tj T_JMAX

1/9

January 2000

12 3 4 5 6 7...9

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