Datasheet > STH130N10F3-2

STH130N10F3-2

更新时间： 2024-02-04 14:50:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
23页	1219K
描述
N-channel 100 V, 7.8 mÎ© typ., 120 A STripFETâ¢III Power MOSFET in TO-220FP, IÂ²PAKFP, HÂ²PAK-2 and TO-220 packages

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数据手册
替代型号

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STH130N10F3-2 数据手册

STF130N10F3, STFI130N10F3,

STH130N10F3-2, STP130N10F3

N-channel 100 V, 7.8 mΩtyp., 120 A STripFET™III Power MOSFET

in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages

Datasheet — production data

Features

R_DS(on)

max.

Order codes

V_DSS

I_D

STF130N10F3

STFI130N10F3

STH130N10F3-2

STP130N10F3

9.6 mΩ

46 A

120 A

TO-220FP

100 V

I²PAKFP

9.3 mΩ

9.6 mΩ

TAB

■ Ultra low on-resistance

■ 100% avalanche tested

TO-220

H²PAK-2

Applications

■ High current switching applications

Figure 1.

Internal schematic diagram

Description

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These devices are N-channel enhancement mode

Power MOSFETs produced using

STMicroelectronics’ STripFET™ III technology,

which is specifically designed to minimize on-

resistance and gate charge to provide superior

switching performance.

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Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF130N10F3

STFI130N10F3

STH130N10F3-2

STP130N10F3

TO-220FP

I²PAKFP

H²PAK-2

TO-220

Tube

130N10F3

Tape and reel

Tube

November 2012

Doc ID 018492 Rev 3

1/23

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...23

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STH130N10F3-2 替代型号

型号	品牌	替代类型	描述	数据表
IXTA130N10T	LITTELFUSE	功能相似	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXTQ130N10T	LITTELFUSE	功能相似	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低

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