Datasheet > STH12N120K5-2AG

STH12N120K5-2AG

更新时间： 2023-12-20 18:44:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	400K
描述
Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package

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STH12N120K5-2AG 数据手册

STH12N120K5-2AG

Datasheet

Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5

Power MOSFET in an H²PAK‑2 package

Features

TAB

DS(on)

max.

Order code

STH12N120K5-2AG

1200 V

1.9 Ω

7 A

•

AEC-Q101 qualified

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

H PAK-2

D(TAB)

100% avalanche tested

Applications

•

Switching applications

G(1)

Description

S(2, 3)

This very high voltage N-channel Power MOSFET is designed using MDmesh

K5 technology based on an innovative proprietary vertical structure. The result is

a dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

DTG1S23NZ

Product status link

STH12N120K5-2AG

Product summary

Order code

Marking

STH12N120K5-2AG

12A120K5

H²PAK-2

Package

Packing

Tape and reel

DS14124 - Rev 1 - October 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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