是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.91 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 550 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 200 pF | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 180 W |
最大功率耗散 (Abs): | 180 W | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
最大开启时间(吨): | 150 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH12N60FI | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | TO-218VAR |
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STH12NA60 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STH12NA60FI | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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STH13009 | STMICROELECTRONICS |
获取价格 |
High voltage fast-switching NPN power transistor |
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STH13090 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-218AC |
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STH13091 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 15A I(C) | TO-218AC |
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STH130N10F3-2 | STMICROELECTRONICS |
获取价格 |
N-channel 100 V, 7.8 mΩ typ., 120 A STripFET |
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STH13N120K5-2AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道1200 V、630 mOhm典型值、12 A MDmesh K5功率MOSF |
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STH13N50D | STMICROELECTRONICS |
获取价格 |
13A, 500V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 |
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STH13NB60 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET |
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