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STH110N10F7-6 PDF预览

STH110N10F7-6

更新时间: 2024-11-20 01:21:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 863K
描述
High avalanche ruggedness

STH110N10F7-6 数据手册

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STH110N10F7-2,  
STH110N10F7-6  
N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7  
Power MOSFETs in H²PAK-2 and H²PAK-6 packages  
Datasheet - production data  
Features  
TAB  
TAB  
RDS(on)  
Order code  
VDS  
ID  
PTOT  
max.  
7
2
STH110N10F7-2  
STH110N10F7-6  
3
1
2
100 V  
6.5 mΩ  
110 A  
150 W  
1
2
H PAK-6  
H PAK-2  
Among the lowest RDS(on) on the market  
Excellent figure of merit (FoM)  
Low Crss/Ciss ratio for EMI immunity  
High avalanche ruggedness  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
Description  
These N-channel Power MOSFETs utilize  
STripFET™ F7 technology with an enhanced  
trench gate structure that results in very low on-  
resistance, while also reducing internal  
capacitance and gate charge for faster and more  
efficient switching.  
S(2,3,4,5,6,7)  
Table 1: Device summary  
Order code  
Marking  
Package  
H2PAK-2  
H2PAK-6  
Packing  
STH110N10F7-2  
STH110N10F7-6  
Tape  
and reel  
110N10F7  
November 2014  
DocID024027 Rev 4  
1/19  
www.st.com  
This is information on a product in full production.  

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