STH10NC60FI

更新时间： 2024-02-11 16:43:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	340K
描述
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET

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STH10NC60FI 数据手册

STW10NC60

STH10NC60FI

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218

PowerMesh™II MOSFET

TYPE

DSS

DS(on)

STW10NC60

STH10NC60FI

600 V

< 0.75 Ω

10 A

10 A (*)

■

TYPICAL R (on) = 0.6 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-247

ISOWATT218

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STW10NC60 STH10NC60FI

Unit

Drain-source Voltage (V = 0)

600

±30

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

6.3

10 (*)

6.3 (*)

40 (*)

Drain Current (continuous) at T = 100°C

(1)

Drain Current (pulsed)

Total Dissipation at T = 25°C

160

1.28

TOT

Derating Factor

0.48

W/°C

V/ns

dv/dt

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

3.5

ISO

2500

stg

– 55 to 150

°C

Max. Operating Junction Temperature

(1)I ≤10A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

j JMAX

(•)Pulse width limited by safe operating area

(BR)DSS

(*) Limited only by Maximum Temperature Allowed

February 2002

1/9

12 3 4 5 6 7...9

中文翻译

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