Datasheet > 晶体管 > IGBT> STGB19NC60KD

STGB19NC60KD

更新时间： 2024-11-19 04:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
17页	586K
描述
20 A - 600 V - short circuit rugged IGBT

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中文翻译

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数据手册

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STGB19NC60KD 数据手册

STGB19NC60KD

STGF19NC60KD - STGP19NC60KD

20 A - 600 V - short circuit rugged IGBT

Features

■ Low on-voltage drop (V

)

CE(sat)

■ Low C / C ratio (no cross conduction

res

ies

susceptibility)

■ Short circuit withstand time 10 µs

■ IGBT co-packaged with ultra fast free-wheeling

D PAK

TO-220

diode

Applications

■ High frequency inverters

■ Motor drivers

TO-220FP

Description

Figure 1.

Internal schematic diagram

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STGB19NC60KDT4

STGF19NC60KD

STGP19NC60KD

GB19NC60KD

GF19NC60KD

GP19NC60KD

Tape and reel

Tube

TO-220FP

TO-220

Tube

May 2008

Rev 2

1/17

www.st.com

12 3 4 5 6 7...17

中文翻译

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