是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
Is Samacsys: | N | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 461 ns |
标称接通时间 (ton): | 39.5 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB14NC60K | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT |
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STGB14NC60K_06 | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT |
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STGB14NC60KD | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT |
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STGB14NC60KD_06 | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT |
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STGB14NC60KD_08 | STMICROELECTRONICS |
获取价格 |
14 A - 600 V - short circuit rugged IGBT |
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STGB14NC60KD_10 | STMICROELECTRONICS |
获取价格 |
14 A, 600 V - short-circuit rugged IGBT |
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STGB14NC60KDT4 | STMICROELECTRONICS |
获取价格 |
14 A, 600 V - short-circuit rugged IGBT |
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STGB14NC60KT4 | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT |
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STGB15H60DF | STMICROELECTRONICS |
获取价格 |
600 V、15 A高速沟槽栅场截止H系列IGBT |
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STGB15M65DF2 | STMICROELECTRONICS |
获取价格 |
沟槽栅场截止IGBT,M系列,650 V、15 A,低损耗 |
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