Datasheet > STGB14NC60KDT4

STGB14NC60KDT4

更新时间： 2024-11-19 06:14:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
16页	540K
描述
14 A, 600 V - short-circuit rugged IGBT

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中文翻译

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数据手册

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STGB14NC60KDT4 数据手册

STGB14NC60KD

STGF14NC60KD, STGP14NC60KD

14 A, 600 V - short-circuit rugged IGBT

Features

TAB

■ Short circuit withstand time 10µs.

■ Low on-voltage drop (V

)

CE(sat)

■ Low C / C ratio (no cross conduction

res

ies

susceptibility)

D²PAK

TO-220

■ Switching losses include diode recovery

energy

■ Very soft ultra fast recovery antiparallel diode

Applications

TO-220FP

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

Figure 1.

Internal schematic diagram

■ Motor drivers

Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STGB14NC60KDT4

STGF14NC60KD

STGP14NC60KD

GB14NC60KD

GF14NC60KD

GP14NC60KD

Tape and reel

Tube

TO-220FP

TO-220

Tube

March 2010

Doc ID 11424 Rev 7

1/16

www.st.com

12 3 4 5 6 7...16

中文翻译

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