Datasheet > STGB14NC60KT4

STGB14NC60KT4

更新时间： 2024-01-24 08:43:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
16页	436K
描述
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT

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中文翻译

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数据手册

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STGB14NC60KT4 数据手册

STGB14NC60K

STGD14NC60K

N-channel 14A - 600V -DPAK - D²PAK

Short circuit rated PowerMESH™ IGBT

General features

I_C

V_CE(sat)

(Max)@ 25°C

Type

V_CES

@100°C

STGB14NC60K 600V

STGD14NC60K 600V

<2.5V

14A

■ Low on-voltage drop (Vcesat)

■ Low C / C ratio ( no cross conduction

DPAK

D²PAK

res

ies

susceptibility)

■ Short circuit withstand time 10µs

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the Power

MESH™ IGBTs, with outstanding performances.

The suffix “K” identifies a family optimized for high

frequency motor control applications with short

circuit withstand capability.

Internal schematic diagram

Applications

■ High frequency inverters

■ Motor drivers with short circuit protection

Order codes

Part number

Marking

Package

Packaging

STGB14NC60KT4

STGD14NC60KT4

GB14NC60K

GD14NC60K

D²PAK

DPAK

Tape & reel

July 2006

Rev 1

1/16

www.st.com

12 3 4 5 6 7...16

中文翻译

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