是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 8 weeks |
风险等级: | 1.67 | Is Samacsys: | N |
其他特性: | VOLTAGE CLAMPING | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 30 A | 集电极-发射极最大电压: | 420 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 门极发射器阈值电压最大值: | 2.3 V |
门极-发射极最大电压: | 16 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AUTOMOTIVE IGNITION | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 22200 ns | 标称接通时间 (ton): | 4450 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB19NC60HD | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBT |
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STGB19NC60HD_0810 | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBTE[ |
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STGB19NC60HD_09 | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBT |
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STGB19NC60HDT4 | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBT |
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STGB19NC60HT4 | STMICROELECTRONICS |
获取价格 |
40A, 600V, N-CHANNEL IGBT, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 |
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STGB19NC60K | STMICROELECTRONICS |
获取价格 |
20 A - 600 V - short circuit rugged IGBT |
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STGB19NC60KD | STMICROELECTRONICS |
获取价格 |
20 A - 600 V - short circuit rugged IGBT |
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STGB19NC60KDT4 | STMICROELECTRONICS |
获取价格 |
20 A - 600 V - short circuit rugged IGBT |
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STGB19NC60KT4 | STMICROELECTRONICS |
获取价格 |
20 A - 600 V - short circuit rugged IGBT |
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STGB19NC60WT4 | STMICROELECTRONICS |
获取价格 |
40A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263, D2PAK-3 |
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