型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB15M65DF2 | STMICROELECTRONICS |
获取价格 |
沟槽栅场截止IGBT,M系列,650 V、15 A,低损耗 | |
STGB18N40LZ | STMICROELECTRONICS |
获取价格 |
EAS 180 mJ - 400 V - internally clamped IGBT | |
STGB18N40LZ_0805 | STMICROELECTRONICS |
获取价格 |
EAS 180 mJ - 400 V - internally clamped IGBT | |
STGB18N40LZ_09 | STMICROELECTRONICS |
获取价格 |
EAS 180 mJ - 390 V - internally clamped IGBT | |
STGB18N40LZ-1 | STMICROELECTRONICS |
获取价格 |
EAS 180 mJ - 400 V - internally clamped IGBT | |
STGB18N40LZT4 | STMICROELECTRONICS |
获取价格 |
EAS 180 mJ - 400 V - internally clamped IGBT | |
STGB19NC60HD | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBT | |
STGB19NC60HD_0810 | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBTE[ | |
STGB19NC60HD_09 | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBT | |
STGB19NC60HDT4 | STMICROELECTRONICS |
获取价格 |
19 A - 600 V - very fast IGBT |