Datasheet > STGB18N40LZ_09

STGB18N40LZ_09

更新时间： 2024-11-19 11:48:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
19页	893K
描述
EAS 180 mJ - 390 V - internally clamped IGBT

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中文翻译

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数据手册

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STGB18N40LZ_09 数据手册

STGB18N40LZ

STGD18N40LZ, STGP18N40LZ

EAS 180 mJ - 390 V - internally clamped IGBT

Features

■ AEC Q101 compliant

■ 180 mJ of avalanche energy @ T = 150 °C,

L = 3 mH

DPAK

IPAK

■ ESD gate-emitter protection

■ Gate-collector high voltage clamping

■ Logic level gate drive

■ Low saturation voltage

TO-220

■ High pulsed current capability

■ Gate and gate-emitter resistor

D²PAK

I²PAK

Application

■ Pencil coil electronic ignition driver

Figure 1.

Internal schematic diagram

C (2 or TAB)

Description

This application-specific IGBT utilizes the most

advanced PowerMESH™ technology. The built-in

Zener diodes between gate-collector and gate-

emitter provide overvoltage protection

capabilities. The device also exhibits low on-state

voltage drop and low threshold drive for use in

automotive ignition system.

G (1)

E (3)

SC30180

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STGB18N40LZ-1

STGB18N40LZT4

STGD18N40LZ-1

STGD18N40LZT4

STGP18N40LZ

GB18N40LZ

GD18N40LZ

GP18N40LZ

I²PAK

D²PAK

IPAK

Tube

Tape and reel

Tube

DPAK

TO-220

Tape and reel

Tube

May 2009

Doc ID 14322 Rev 5

1/19

www.st.com

12 3 4 5 6 7...19

中文翻译

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