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STGB14NC60KD_08 PDF预览

STGB14NC60KD_08

更新时间: 2024-02-26 08:18:21
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
16页 456K
描述
14 A - 600 V - short circuit rugged IGBT

STGB14NC60KD_08 数据手册

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STGB14NC60KD  
STGF14NC60KD - STGP14NC60KD  
14 A - 600 V - short circuit rugged IGBT  
Features  
2
Low on-voltage drop (V  
)
CE(sat)  
Low C / C ratio (no cross conduction  
res  
ies  
susceptibility)  
3
3
1
2
1
Switching losses include diode recovery  
D²PAK  
TO-220  
energy  
Very soft ultra fast recovery antiparallel diode  
Short circuit withstand time 10µs.  
3
2
1
Applications  
TO-220FP  
High frequency inverters  
SMPS and PFC in both hard switch and  
resonant topologies  
Figure 1.  
Internal schematic diagram  
Motor drivers  
Description  
This IGBT utilizes the advanced PowerMESH™  
process resulting in an excellent trade-off  
between switching performance and low on-state  
behavior.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STGB14NC60KDT4  
STGF14NC60KD  
STGP14NC60KD  
GB14NC60KD  
GF14NC60KD  
GP14NC60KD  
Tape and reel  
Tube  
TO-220FP  
TO-220  
Tube  
April 2008  
Rev 6  
1/16  
www.st.com  
16  

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