品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
16页 | 436K | |
描述 | ||
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB14NC60K_06 | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT | |
STGB14NC60KD | STMICROELECTRONICS |
获取价格 |
N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT | |
STGB14NC60KD_06 | STMICROELECTRONICS |
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N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT | |
STGB14NC60KD_08 | STMICROELECTRONICS |
获取价格 |
14 A - 600 V - short circuit rugged IGBT | |
STGB14NC60KD_10 | STMICROELECTRONICS |
获取价格 |
14 A, 600 V - short-circuit rugged IGBT | |
STGB14NC60KDT4 | STMICROELECTRONICS |
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14 A, 600 V - short-circuit rugged IGBT | |
STGB14NC60KT4 | STMICROELECTRONICS |
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N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT | |
STGB15H60DF | STMICROELECTRONICS |
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600 V、15 A高速沟槽栅场截止H系列IGBT | |
STGB15M65DF2 | STMICROELECTRONICS |
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沟槽栅场截止IGBT,M系列,650 V、15 A,低损耗 | |
STGB18N40LZ | STMICROELECTRONICS |
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EAS 180 mJ - 400 V - internally clamped IGBT |