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STF20N95K5 PDF预览

STF20N95K5

更新时间: 2024-11-23 12:15:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
20页 1463K
描述
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

STF20N95K5 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:2.26Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:950 V最大漏极电流 (Abs) (ID):15.5 A
最大漏极电流 (ID):15.5 A最大漏源导通电阻:0.33 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):62 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF20N95K5 数据手册

 浏览型号STF20N95K5的Datasheet PDF文件第2页浏览型号STF20N95K5的Datasheet PDF文件第3页浏览型号STF20N95K5的Datasheet PDF文件第4页浏览型号STF20N95K5的Datasheet PDF文件第5页浏览型号STF20N95K5的Datasheet PDF文件第6页浏览型号STF20N95K5的Datasheet PDF文件第7页 
STB20N95K5, STF20N95K5  
STP20N95K5, STW20N95K5  
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5™ Power MOSFET  
in D²PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet — production data  
Features  
TAB  
Order codes VDSS RDS(on)max  
ID  
PW  
3
STB20N95K5  
STF20N95K5  
250 W  
40 W  
1
3
2
PAK  
1
950 V < 0.330 Ω 17.5 A  
TO-220FP  
STP20N95K5  
STW20N95K5  
TAB  
250 W  
TO-220 worldwide best RDS(on)  
Worldwide best FOM (figure of merit)  
Ultra low gate charge  
3
2
3
1
2
TO-247 1  
TO-220  
100% avalanche tested  
Zener-protected  
Figure 1.  
Internal schematic diagram  
Applications  
D(2,TAB)  
Switching applications  
Description  
These devices are N-channel Power MOSFETs  
developed using SuperMESH™ 5 technology.  
This revolutionary, avalanche-rugged, high  
voltage Power MOSFET technology is based on  
an innovative proprietary vertical structure. The  
result is a drastic reduction in on-resistance and  
ultra low gate charge for applications which  
require superior power density and high  
efficiency.  
G(1)  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB20N95K5  
STF20N95K5  
STP20N95K5  
STW20N95K5  
PAK  
TO-220FP  
TO-220  
Tape and reel  
20N95K5  
Tube  
TO-247  
June 2012  
Doc ID 16825 Rev 4  
1/20  
This is information on a product in full production.  
www.st.com  
20  

STF20N95K5 替代型号

型号 品牌 替代类型 描述 数据表
STF10N62K3 STMICROELECTRONICS

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STF6N95K5 STMICROELECTRONICS

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