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STF10NM60N PDF预览

STF10NM60N

更新时间: 2024-01-23 05:03:48
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
17页 907K
描述
N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

STF10NM60N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.53雪崩能效等级(Eas):130 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):32 A子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF10NM60N 数据手册

 浏览型号STF10NM60N的Datasheet PDF文件第2页浏览型号STF10NM60N的Datasheet PDF文件第3页浏览型号STF10NM60N的Datasheet PDF文件第4页浏览型号STF10NM60N的Datasheet PDF文件第5页浏览型号STF10NM60N的Datasheet PDF文件第6页浏览型号STF10NM60N的Datasheet PDF文件第7页 
STD10NM60N, STF10NM60N  
STP10NM60N, STU10NM60N  
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK  
MDmesh™ II Power MOSFET  
Features  
VDSS  
@TJmax  
RDS(on)  
max.  
Order codes  
ID  
Pw  
3
3
STD10NM60N  
STF10NM60N  
STP10NM60N  
STU10NM60N  
70 W  
25 W  
2
2
1
1
TO-220  
TO-220FP  
650 V  
< 0.55 Ω 10 A  
70 W  
3
100% avalanche tested  
2
3
1
1
Low input capacitance and gate charge  
Low gate input resistance  
IPAK  
DPAK  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆꢇ  
These devices are N-channel 600 V Power  
MOSFET realized using the second generation of  
MDmesh technology. It applies the benefits of  
the multiple drain process to STMicroelectronics’  
well-known PowerMESH horizontal layout  
'ꢅꢁꢇ  
structure. The resulting product offers improved  
on-resistance, low gate charge, high dv/dt  
capability and excellent avalanche characteristics.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD10NM60N  
STF10NM60N  
STP10NM60N  
STU10NM60N  
10NM60N  
10NM60N  
10NM60N  
10NM60N  
DPAK  
TO-220FP  
TO-220  
IPAK  
Tape and reel  
Tube  
Tube  
Tube  
November 2010  
Doc ID 15764 Rev 5  
1/17  
www.st.com  
17  

STF10NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STF19NM50N STMICROELECTRONICS

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N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247

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