Datasheet > STD10LN80K5

STD10LN80K5

更新时间： 2024-11-25 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	740K
描述
N沟道800 V、0.55 Ohm典型值、8 A MDmesh K5功率MOSFET，DPAK封装

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STD10LN80K5 数据手册

STD10LN80K5

Datasheet

N-channel 800 V, 550 mΩ typ., 8 A MDmesh K5 Power MOSFET

in a DPAK package

Features

TAB

DS(on)

max.

Order code

STD10LN80K5

800 V

630 mΩ

8 A

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

DPAK

D(2, TAB)

100% avalanche tested

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

Description

AM01476v1_tab

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STD10LN80K5

Product summary

Order code

STD10LN80K5

Marking

Package

Packing

10LN80K5

DPAK

Tape and reel

DS11531 - Rev 2 - June 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...18

中文翻译

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