Datasheet > STD10N60M6

STD10N60M6

更新时间： 2024-02-07 12:35:06

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	625K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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STD10N60M6 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	16 weeks	风险等级：	5.76
Base Number Matches：	1

STD10N60M6 数据手册

STD10N60M6

Datasheet

N-channel 600 V, 520 mΩ typ., 6.4 A MDmesh

M6 Power MOSFET in a DPAK package

Features

TAB

DS(on)

max.

Order code

Jmax

STD10N60M6

650 V

600 mΩ

6.4 A

•

Reduced switching losses

DPAK

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

LLC converters, resonant converters

Boost PFC converters

S(3)

AM01475V1

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STD10N60M6

Product summary

Order code

Marking

STD10N60M6

10N60M6

Package

Packing

DPAK

Tape and reel

DS13010 - Rev 2 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...18

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