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STD10P6F6 PDF预览

STD10P6F6

更新时间: 2024-01-03 14:56:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
15页 490K
描述
P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages

STD10P6F6 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:20 weeks
风险等级:1.68Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:527177
Samacsys Pin Count:3Samacsys Part Category:MOSFET (P-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:STD10P6F6
Samacsys Released Date:2019-02-27 14:18:16Is Samacsys:N
雪崩能效等级(Eas):80 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.116 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):35 W最大脉冲漏极电流 (IDM):40 A
表面贴装:NO端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD10P6F6 数据手册

 浏览型号STD10P6F6的Datasheet PDF文件第2页浏览型号STD10P6F6的Datasheet PDF文件第3页浏览型号STD10P6F6的Datasheet PDF文件第4页浏览型号STD10P6F6的Datasheet PDF文件第5页浏览型号STD10P6F6的Datasheet PDF文件第6页浏览型号STD10P6F6的Datasheet PDF文件第7页 
STD10P6F6,  
STP10P6F6  
P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™  
Power MOSFET in DPAK and TO-220 packages  
Datasheet — preliminary data  
Features  
Order codes  
VDSS  
RDS(on) max  
ID  
STD10P6F6  
STP10P6F6  
60 V  
60 V  
0.18 Ω  
0.18 Ω  
10 A  
10 A  
RDS(on) * Qg industry benchmark  
Extremely low on-resistance RDS(on)  
High avalanche ruggedness  
3
3
2
1
1
TO-220  
DPAK  
Low gate drive power losses  
Applications  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
These devices are P-channel Power MOSFETs  
developed using the 6th generation of STripFET™  
DeepGATE™ technology, with a new gate  
structure. The resulting Power MOSFETs exhibits  
the lowest RDS(on) in all packages.  
AM11258v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD10P6F6  
STP10P6F6  
10P6F6  
10P6F6  
DPAK  
Tape and reel  
Tube  
TO-220  
Note:  
For the P-channel Power MOSFET the actual polarity of the voltages and the current must  
be reversed.  
June 2012  
Doc ID 022967 Rev 2  
1/15  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
15  
 

STD10P6F6 替代型号

型号 品牌 替代类型 描述 数据表
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P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET
FQD7P06TM ONSEMI

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功率 MOSFET,P 沟道,QFET®,-60 V,-5.4 A,450 mΩ,DPAK

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