Datasheet > STD10P10F6

STD10P10F6

更新时间： 2023-12-20 18:44:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	399K
描述
P沟道100 V、0.136 Ohm典型值、10 A STripFET F6功率MOSFET，DPAK封装

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数据手册

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STD10P10F6 数据手册

STD10P10F6

Datasheet

P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET

in a DPAK package

Features

max.

Order code

DS(on)

TAB

STD10P10F6

-100 V

0.18 Ω

-10 A

•

Very low on-resistance

Very low gate charge

DPAK

High avalanche ruggedness

Low gate drive power loss

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This device is a P-channel Power MOSFET developed using the STripFET F6

technology, with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

S(3)

AM11258v1

Product status link

STD10P10F6

Product summary

Order code

STD10P10F6

10P10F6

Marking

Package

Packing

DPAK

Tape and reel

DS10343 - Rev 3 - April 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...16

中文翻译

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