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STD10NM65N_08 PDF预览

STD10NM65N_08

更新时间: 2024-02-08 10:55:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
17页 527K
描述
N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

STD10NM65N_08 数据手册

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STD10NM65N - STF10NM65N  
STP10NM65N - STU10NM65N  
N-channel 650 V, 0.43 , 9 A MDmesh™ II Power MOSFET  
TO-220, TO-220FP, IPAK, DPAK  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
2
3
1
2
STD10NM65N  
STF10NM65N  
STP10NM65N  
STU10NM65N  
710 V  
710 V  
710 V  
710 V  
< 0.48  
< 0.48 Ω  
< 0.48 Ω  
< 0.48 Ω  
9 A  
9 A(1)  
9 A  
1
IPAK  
TO-220  
9 A  
3
1
1. Limited only by maximum temperature allowed  
3
2
100% avalanche tested  
1
DPAK  
TO-220FP  
Low input capacitance and gate charge  
Low gate input resistance  
Application  
Figure 1.  
Internal schematic diagram  
Switching applications  
Description  
This series of devices implements the second  
generation of MDmesh™ Technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the Company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD10NM65N  
STF10NM65N  
STP10NM65N  
STU10NM65N  
10NM65N  
10NM65N  
10NM65N  
10NM65N  
Tape & reel  
Tube  
TO-220FP  
TO-220  
IPAK  
Tube  
Tube  
October 2008  
Rev 3  
1/17  
www.st.com  
17  

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