Datasheet > STD10NF30

STD10NF30

更新时间： 2023-12-20 18:45:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	711K
描述
汽车级N沟道300 V、0.28 Ohm典型值、10 A MESH OVERLAY功率MOSFET，DPAK封装

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STD10NF30 数据手册

STD10NF30

Datasheet

Automotive-grade N-channel 300 V, 280 mΩ typ., 10 A, STripFET II

Power MOSFET in a DPAK package

Features

TAB

DS(on)

max.

Order code

STD10NF30

300 V

330 mΩ

10 A

DPAK

•

AEC-Q101 qualified

Exceptional dv/dt capability

100% avalanche tested

D(2, TAB)

Low gate charge

175 °C maximum junction temperature

G(1)

Applications

•

Switching applications

S(3)

AM01475v1_noZen

Description

This Power MOSFET has been developed using STMicroelectronics' unique

STripFET process, which is specifically designed to minimize input capacitance and

gate charge. This renders the device suitable for use as primary switch in advanced

high-efficiency isolated DC-DC converters for telecom and computer applications,

and applications with low gate charge driving requirements.

Product status link

STD10NF30

Product summary

Order code

STD10NF30

Marking

Package

Packing

10NF30

DPAK

Tape and reel

DS10271 - Rev 3 - August 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

中文翻译

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