Datasheet > STD10NF10L

STD10NF10L

更新时间： 2024-10-01 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	612K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:15A;Vgs(th)(V):±20;漏源导通电阻:110mΩ@10V

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STD10NF10L 数据手册

UMW

STD10NF10

100V N-Channel Power MOSFET

General Description

The STD10NF10 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and operation

with gate voltages as low as 4.5V. This device is suitable

for use as a wide variety of applications.

Features

VDS = 100V,ID =15A

RDS(ON),95 mΩ(Typ) @ VGS =10V

RDS(ON), 100mΩ(Typ) @ VGS =4.5V

Low Total Gate Charge

Low Reverse Transfer Capacitance

Improved dv/dt Capability

Fast Switching Speed

Application

Uninterruptible Power Supply(UPS)

Inverter System

Absolute Maximum Ratings(T_A=25℃unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

100

V_GS

±20

TC=25℃

Drain Current-Continuous

I_D

TC=100℃

Drain Current-Pulsed^Note2

I_DM

P_D

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

TC=25℃

℃

T_STG

T_J

-55 to +175

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

℃/W

Thermal Resistance,Junction-to-Case

2.72

RθJC

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