Datasheet > STD10N60M2

STD10N60M2

更新时间： 2023-12-20 18:44:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
27页	609K
描述
N沟道600 V、0.55 Ohm典型值、7.5 A MDmesh M2功率MOSFET，DPAK封装

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数据手册

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STD10N60M2 数据手册

STB10N60M2, STD10N60M2, STP10N60M2

Datasheet

N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET

in a D²PAK, DPAK and TO-220 packages

Features

TAB

@ T max.

max.

Order codes

STB10N60M2

STD10N60M2

STP10N60M2

Package

D²PAK

DPAK

DS(on)

DPAK

D²PAK

650 V

0.60 Ω

7.5 A

TAB

TO-220

•

Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

TO-220

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

AM01476v1_tab

These devices are N-channel Power MOSFETs developed using the MDmesh M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

Product status links

STB10N60M2

STD10N60M2

STP10N60M2

DS9703 - Rev 4 - January 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...27

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