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STD10PF06T4 PDF预览

STD10PF06T4

更新时间: 2024-01-30 18:49:30
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 299K
描述
P-CHANNEL 60V - 0.18 W - 10A IPAK/DPAK STripFET™ II POWER MOSFET

STD10PF06T4 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:8.02
Is Samacsys:N雪崩能效等级(Eas):125 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD10PF06T4 数据手册

 浏览型号STD10PF06T4的Datasheet PDF文件第2页浏览型号STD10PF06T4的Datasheet PDF文件第3页浏览型号STD10PF06T4的Datasheet PDF文件第4页浏览型号STD10PF06T4的Datasheet PDF文件第5页浏览型号STD10PF06T4的Datasheet PDF文件第6页浏览型号STD10PF06T4的Datasheet PDF文件第7页 
STD10PF06  
P-CHANNEL 60V - 0.18 - 10A IPAK/DPAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STD10PF06  
60 V  
< 0.20 Ω  
10 A  
TYPICAL R (on) = 0.18 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE  
3
3
2
1
1
APPLICATION ORIENTED  
CHARACTERIZATION  
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
TO-251  
(Suffix “-1”)  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
steps  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
60  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
60  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
± 20  
V
I
Drain Current (continuous) at T = 25°C  
10  
A
D
C
I
Drain Current (continuous) at T = 100°C  
7
40  
A
D
C
I
•)  
Drain Current (pulsed)  
A
DM(  
P
Total Dissipation at T = 25°C  
40  
W
tot  
C
Derating Factor  
0.27  
6
W/°C  
V/ns  
°C  
°C  
(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
dv/dt  
T
-65 to 175  
175  
stg  
T
Max. Operating Junction Temperature  
j
•) Pulse width limited by safe operating area.  
Note: P-CHANNEL MOSFET actual polarity of voltages and current  
has to be reversed  
(1) I 10A, di/dt 300A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
DD  
(
March 2002  
1/9  
.

STD10PF06T4 替代型号

型号 品牌 替代类型 描述 数据表
STD10P6F6 STMICROELECTRONICS

类似代替

P-channel 60 V, 0.15 Ω typ., 10 A STripFETâ„
STD10PF06 STMICROELECTRONICS

类似代替

P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET
STB16PF06LT4 STMICROELECTRONICS

类似代替

P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET

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