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STD10PF06 PDF预览

STD10PF06

更新时间: 2024-11-23 22:08:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
8页 88K
描述
P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET

STD10PF06 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:43 weeks 2 days
风险等级:5.8Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:812216
Samacsys Pin Count:3Samacsys Part Category:MOSFET (P-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:DPAK TO-252 (Suffix “T4”)_1
Samacsys Released Date:2020-01-25 09:59:11Is Samacsys:N
雪崩能效等级(Eas):125 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD10PF06 数据手册

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STD10PF06  
P - CHANNEL 60V - 0.18 - 10A TO-252  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD10PF06  
60 V  
< 0.20 Ω  
10 A  
TYPICAL RDS(on) = 0.18 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
1
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
DPAK  
TO-252  
(Suffix ”T4”)  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
60  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
60  
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
10  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
7
A
I
DM()  
Drain Current (pulsed)  
40  
40  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.27  
6
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
175  
≤ ≤ µ ≤ ≤  
( 1) ISD 10 A, di/dt 300 A/ s, VDD V(BR)DSS, Tj TJMAX  
( ) Pulse width limited by safe operating area  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed  
1/8  
April 1999  

STD10PF06 替代型号

型号 品牌 替代类型 描述 数据表
STD10PF06T4 STMICROELECTRONICS

类似代替

P-CHANNEL 60V - 0.18 W - 10A IPAK/DPAK STripF
STD10P6F6 STMICROELECTRONICS

类似代替

P-channel 60 V, 0.15 Ω typ., 10 A STripFETâ„

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