Datasheet > SST12LF02_15

SST12LF02_15

更新时间： 2024-09-21 01:18:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		局域网 WLAN 无线局域网
页数	文件大小	规格书
17页	2147K
描述
2.4 GHz WLAN High-Gain, High-Efficiency FEM

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SST12LF02_15 数据手册

2.4 GHz WLAN High-Gain, High-Efficiency FEM

SST12LF02

Data Sheet

SST12LF02 is a 2.4 GHz Front-End Module (FEM) that combines a high-perfor-

mance Power Amplifier (PA) and a single-pole, three-throw, antenna switch for Tx/

Rx and Bluetooth^®control. Designed in compliance with IEEE 802.11 b/g/n/256

QAM applications and based on GaAs PHEMT/HBT technology, the SST12LF02

operates within the frequency range of 2.4- 2.5 GHz at a very low DC-current con-

sumption. The Transmitter chain has excellent linearity, typically 3% EVM up to 18

dBm output power, for 54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask at 21 dBm. The transmitter will also provide 17 dBm with 11n, MCS7-

HT40 modulation and 16 dBm with 256 QAM MCS9-HT40 modulation.

SST12LF02 is offered in a 16-contact XQFN package.

Features

• High gain:

• Low shut-down current (~2 µA)

– Typically 29 dB gain across 2.4–2.5 GHz over tempera-

ture 0°C to +85°C for Transmitter (TX) chain.

• Limited variation over temperature

– ~1 dB gain/power variation between 0°C to +85°C

• High linear output power:

• Excellent on-chip power detection

– >24 dBm P1dB

- Single-tone measurement

– >15 dB dynamic range on-chip power detection

- Please refer to “Absolute Maximum Stress Ratings” on

page 6

• Input/output ports matched to 50 internally and

DC decoupled.

– Meets 802.11g OFDM ACPR requirement up to 21 dBm

– ~3% EVM up to 18 dBm for

54 Mbps 802.11g signal

• Packages available

– Meets 802.11b ACPR requirement up to 21 dBm

– 2.5% EVM up to 17 dBm for 11n, MCS7-HT40

– 1.8% EVM up to 16 dBm for 256 QAM MCS9-HT40

– 16-contact XQFN – 3mm x 3mm

• All non-Pb (lead-free) devices are RoHS compliant

• High power-added efficiency/Low operating cur-

rent for 802.11b/g/n applications

– ~27%/160 mA @ P_OUT= 21 dBm for 802.11g

Applications

• WLAN (IEEE 802.11b/g/n)

– ~26%/165 mA @ P_OUT= 21 dBm for 802.11b

• Low I_REFpower-up/down control

– I_REF<2 mA

• Cordless phones

• Low idle current

• 2.4 GHz ISM wireless equipment

– ~65 mA I_CQfor 11g operation

– ~80 mA I_CQfor 11n and 256 QAM operation

• High-speed power-up/down

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

www.microchip.com

DS-70005001D

01/15

12 3 4 5 6 7...17

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与SST12LF02_15相关器件

型号	品牌	获取价格	描述	数据表
SST12LF02-QXCE	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
SST12LF02-QXCE-K	MICROCHIP	获取价格	2.4 GHz WLAN High-Gain, High-Efficiency FEM
SST12LF03	ETC	获取价格	2.4 GHz 高增益及高效率前端模块
SST12LF09	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module
SST12LF09-Q3CE	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module
SST12LF09-Q3CE-K	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module
SST12LN01	SST	获取价格	2.4-2.5 GHz Low-Noise Amplifier
SST12LN01	MICROCHIP	获取价格	2.4-2.5 GHz WLAN Low-Noise Amplifier
SST12LN01-QU6E	MICROCHIP	获取价格	2.4-2.5 GHz WLAN Low-Noise Amplifier
SST12LN01-QU6E-K	MICROCHIP	获取价格	2.4-2.5 GHz WLAN Low-Noise Amplifier

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