Datasheet > SST12LP08-QX6E

SST12LP08-QX6E

更新时间： 2024-09-20 21:16:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
18页	359K
描述
SST12LP08-QX6E

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技术参数
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SST12LP08-QX6E 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	LCC12,.08SQ,16	Reach Compliance Code：	compliant
Factory Lead Time：	5 weeks	风险等级：	7.96
JESD-609代码：	e3	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	12
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC12,.08SQ,16
电源：	3.3 V	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	技术：	BIPOLAR
端子面层：	Matte Tin (Sn) - annealed	Base Number Matches：	1

SST12LP08-QX6E 数据手册

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP08

A Microchip Technology Company

Data Sheet

The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/

GaAs HBT technology. Easily configured for linear high-power applications with

excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency

band, it typically provides 30 dB gain with 34% power-added efficiency, while

meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features

easy board-level usage along with high-speed power-up/down control through a

single combined reference voltage pin and is offered in both 12-contact XQFN

and 6-contact XSON packages.

Features

• High Gain:

• Low Shut-down Current (~2 µA)

– Typically 30 dB gain across 2.4~2.5 GHz over tempera-

ture 0°C to +85°C

• High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

• High linear output power:

• Excellent On-chip power detection

• 20 dB dynamic range on-chip power detection

• Simple input/output matching

• Packages available

– >28 dBm P1dB

- Please refer to “Absolute Maximum Stress Ratings” on

page 6

– Meets 802.11g OFDM ACPR requirement up to 23.5

dBm

– ~3% added EVM up to 20 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 23.5 dBm

– 12-contact XQFN – 2mm x 2mm

– 6-contact XSON – 1.5mm x 1.5mm

• High power-added efficiency/Low operating cur-

rent for both 802.11g/b applications

• All non-Pb (lead-free) devices are RoHS compliant

– ~34%/200 mA @ P_OUT= 23.5 dBm for 802.11b/g

• Single-pin low I_REFpower-up/down control

– I_REF<2 mA

Applications

• WLAN (IEEE 802.11b/g/n)

• Low idle current

– ~85 mA I_CQfor 12-contact XQFN

– ~65 mA I_CQfor 6-contact XSON

• Home RF

• High-speed power-up/down

• Cordless phones

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• 2.4 GHz ISM wireless equipment

www.microchip.com

DS75073B

06/12

12 3 4 5 6 7...18

中文翻译

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与SST12LP08-QX6E相关器件

型号	品牌	获取价格	描述	数据表
SST12LP08-QXBE	MICROCHIP	获取价格	2412 MHz - 2484 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, ROHS COMPLI
SST12LP08-QXBE	SILICON	获取价格	Narrow Band Medium Power Amplifier, 2412MHz Min, 2484MHz Max, 2 X 2 MM, ROHS COMPLIANT, MO
SST12LP10	SST	获取价格	2.4 GHz High-Linearity Power Amplifier
SST12LP10-QVC	SST	获取价格	2.4 GHz High-Linearity Power Amplifier
SST12LP10-QVCE	SST	获取价格	2.4 GHz High-Linearity Power Amplifier
SST12LP10-QVCE-K	SST	获取价格	2.4 GHz High-Linearity Power Amplifier
SST12LP10-QVC-K	SST	获取价格	2.4 GHz High-Linearity Power Amplifier
SST12LP14	SST	获取价格	2.4 GHz Power Amplifier
SST12LP14A	SST	获取价格	2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A-QVC	SILICON	获取价格	Narrow Band Medium Power Amplifier, 2400MHz Min, 2485MHz Max, 3 X 3 MM, VQFN PACKAGE-16

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